Silicon Carbide Market By Product Type (Black Silicon Carbide, Green Silicon Carbide, Other Grades), By Device Type (SiC Discrete Devices, SiC Modules, SiC Wafers) By Application (Power Electronics, Automotive, Aerospace & Defense, Energy & Power, Industrial, Telecommunication), By End-User (Automotive & Transportation, Electronics & Semiconductors, Energy & Power, Aerospace & Defense, Healthcare, Industrial Manufacturing), Global Market Size, Segmental analysis, Regional Overview, Company share analysis, Leading Company Profiles And Market Forecast, 2025 – 2035

Published Date: Mar 2025 | Report ID: MI2161 | 210 Pages

Industry Outlook

The Silicon Carbide market accounted for USD 4.38 Billion in 2024 and is expected to reach USD 15.85 Billion by 2035, growing at a CAGR of around 12.4% between 2025 and 2035. The Silicon Carbide Market involves a worldwide operation that focuses on silicon carbide (SiC) material development and production alongside sector-level applications.

Silicon carbide is a high-performance semiconductor material demonstrating outstanding thermal conductivity, high-level voltage tolerance, and power electronic efficiency. SiC materials find their primary applications in electric vehicles along with renewable energy and aerospace fields and defense operations as well as industrial needs. The market expands due to rising energy-efficient solution needs as well as semiconductor technology progress and sustainable energy system adoption. The wide implementation of diamond semiconductors faces obstacles because of their expensive manufacturing processes along with production difficulties. The market will experience increased growth because of continuous improvements in both wafer production methods and device fabrication techniques.

Report Scope:

ParameterDetails
Largest MarketAsia Pacific
Fastest Growing MarketNorth America
Base Year2024
Market Size in 2024USD 4.38 Billion
CAGR (2025-2035)12.4%
Forecast Years2025-2035
Historical Data2018-2024
Market Size in 2035USD 15.85 Billion
Countries CoveredU.S., Canada, Mexico, U.K., Germany, France, Italy, Spain, Switzerland, Sweden, Finland, Netherlands, Poland, Russia, China, India, Australia, Japan, South Korea, Singapore, Indonesia, Malaysia, Philippines, Brazil, Argentina, GCC Countries, and South Africa
What We CoverMarket growth drivers, restraints, opportunities, Porter’s five forces analysis, PESTLE analysis, value chain analysis, regulatory landscape, pricing analysis by segments and region, company market share analysis, and 10 companies with scope for including additional 15 companies upon request
Segments CoveredProduct Type, Device Type, Application, End-User, and Region

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Market Dynamics

Rising adoption of electric vehicles boosting demand for silicon carbide power electronics

Silicon carbide market growth is accelerating because electric vehicles (EVs) continue to gain popularity, which requires high-performance power electronics. Silicon carbide (SiC) semiconductors lead the market against conventional silicon devices because they offer better performance alongside temperature resistance and quick switching functions. SiC-based MOSFETs and diodes from manufacturers now power necessary inverter and onboard charger systems that improve both EV range and overall system efficiency. The automotive sector implements SiC-based power electronics because lightweight and energy-efficient technologies offer better batteries and increased vehicle sustainability. 

Government programs that encourage electric mobility stimulate the Silicon Carbide Market expansion because manufacturers invest in state-of-the-art semiconductor technology. SiC-based power electronics play a central role in the expanding fast-charging infrastructure because they facilitate both speedier and more effective energy exchange procedures during charging. The semiconductor industry faces increasing demand, which drives leading companies to increase production while implementing innovations in wafer technology. Silicon carbide still stands to play an increasingly vital role in power electronics development because EV adoption is expected to rise globally.

The growing renewable energy sector is increasing the need for high-efficiency power semiconductor devices.

A fast growth pattern emerges in the Silicon Carbide Market because renewable energy needs high-efficiency power semiconductor devices. The solar inversion and wind power applications in renewable energy utilize SiC semiconductors because they offer advanced thermal characteristics and improved energy performance. The devices enable enhanced energy efficiency while minimizing power losses, which leads to better reliability of renewable energy systems. The increasing worldwide efforts to achieve clean power operations make SiC-based power electronics indispensable for maximizing the efficiency of energy systems during transmission. 

The Silicon Carbide Market expands due to rising investments in renewable energy infrastructure, which causes utility providers to actively search for advanced semiconductor solutions. The use of power devices made from silicon carbide allows operations at higher voltage levels, thus suitable for smart grid infrastructure and energy storage needs. Major semiconductor producers continue developing bigger SiC wafer production capabilities through innovation to lower expenses while broadening manufacturing limits. Renewable energy technologies will advance due to governments and industries choosing sustainable energy options, which will increase the adoption of SiC-based semiconductors in the market.

High production costs and complex manufacturing processes limit Silicon Carbide Market growth.

Silicon carbide market development is restricted by the elevated production expenses together with multifaceted manufacturing operations related to SiC semiconductor devices. The manufacturing process for high-purity silicon carbide wafers demands advanced methods like high-temperature processing together with accurate crystal growth, which results in high production expenses. The development of SiC wafers proves harder than standard silicon wafers, so production yields are reduced while expenses increase. The increased costs because of the production factors reduce the adoption potential of silicon carbide power electronics in price-conscious industries. 

Specialized equipment and skilled workers operating in the Silicon Carbide Market add manufacturing complexities because of their necessary involvement. Companies face extensive research and development expenses to improve manufacturing methods and minimize production costs, because of which new competitors find it challenging to access this market. The lack of access to big SiC wafers becomes a barrier to industrial volume production, which disrupts widespread market adoption in rising industries such as electric vehicles and renewable energy. The complete potential of the Silicon Carbide Market depends on solving present obstacles through technological innovation combined with economies of scale.

Advancements in wafer production technology reduce costs and improve silicon carbide adoption.

Progress in wafer production technology for silicon carbide benefits the market through decreased manufacturing expenses while making the material more accessible to users. The improvements in crystal growth methods and wafer production methodologies have resulted in the creation of larger 200mm diameter SiC wafers that improve manufacturing quality. Silicon carbide wafers of increased size enable manufacturers to generate additional semiconductor devices from each batch, thus driving down manufacturing expenses. Money-saving SiC-based power electronics systems have attracted industries dedicated to electric vehicles together with renewable energy because the systems deliver enhanced efficiency and performance. 

The Silicon Carbide Market experiences ongoing improvements regarding defect reduction and yield enhancement, which create additional opportunities for cost efficiency. SiC semiconductor technology has become more available through recent technological developments, which enables broader usage, such as in industrial automation systems and 5G foundation elements. The continuous development of production techniques will drive silicon carbide technology toward better economic feasibility and scalability, thereby speeding up its implementation throughout multiple expanding business fields.

Increasing investments in aerospace and defense applications boosting silicon carbide usage

The market for silicon carbide products expands because aerospace and defense entities increase their investments in high-performance materials for their applications. The military radar industry uses silicon carbide (SiC) semiconductors as well as power management systems and satellite communications systems because these devices possess both high-frequency operational potential and exceptional thermal resilience. The technological components utilize improved energy efficiency together with exceptional reliability characteristics to function effectively in harsh environments, thus serving as perfect elements for upcoming defense systems. Defense organizations, together with governments, speed up the adoption of SiC-based solutions because they prioritize advanced electronic warfare and space exploration programs. 

An increasing number of manufacturers use advancements in power electronics designed for aerospace propulsion to benefit the Silicon Carbide Market as they develop electric aircraft and space vehicles. Leading semiconductor producers commit to R&D efforts for creating radiation-proof SiC components that serve both space exploration needs and military-grade systems. Silicon carbide continues advancing as a vital material for aerospace and defense system improvements because of sustained research investment and technological developments.

Industry Experts Opinion

“A new family of three 1200V SiC full-bridge modules simplifies system design and enables faster time-to-market for next-generation solar, storage, and charging solutions,"

  • Seok Joo Jang, Director of Module Engineering at SemiQ.

"At SNAM Abrasives, innovation is at the heart of everything we do. The launch of our high-purity silicon carbide product line is a testament to our unwavering commitment to providing our customers with the best possible materials for their needs. With its exceptional properties and diverse applications, we believe this product will play a pivotal role in advancing technologies across multiple industries."

  • D. Muralidhar, Director at SNAM Group of Companies

Segment Analysis

Based on Product Type, the Silicon Carbide Market is classified as black silicon carbide, green silicon carbide, and other grades. Black silicon carbide maintains the largest market share because industries extensively utilize it in three sectors: abrasives and refractories, together with metallurgical applications. The market selects black silicon carbide over other grades because of its excellent combination of durability and performance benefits along with cost benefits. Green silicon carbide stands out through its high performance and purity, thus served primarily for semiconductor and precision grinding and ceramics applications. This sector experiences rapid growth because the automotive and electronics industries need enhanced materials for their operations. Market expansion occurs because material processing technologies advance continuously, thus improving quality levels of various silicon carbide grades and their expanded application possibilities. 

 

Based on Device Type, the Silicon Carbide Market is classified as SiC discrete devices, SiC modules, and SiC wafers. Silicon carbide wafers experience substantial growth due to their fundamental requirement in semiconductor production for power electronics as well as electric vehicles. The market acceptability of SiC discrete devices such as MOSFETs and diodes continues to rise due to their leading performance in high-voltage applications. SiC modules have gained popularity because they combine various components for better power control and now appear throughout renewable energy systems and industrial control systems. The markets for electric vehicle powertrains and 5G infrastructure depend strongly on SiC-based semiconductors for their advancement. The market growth of SiC-based devices receives an additional boost from the advancement of wafer production featuring 200mm wafers, which enhances device scalability and efficiency.

Regional Analysis

Asia-Pacific is the largest region in the global Silicon Carbide Market products owing to substantial automotive and electrical power and renewable energy requirements across the region. The Chinese market controls this sector through its advanced manufacturing operations as well as government backing for electric vehicles and continuous semiconductor industry investments. The countries of Japan and South Korea maintain active participation in the silicon carbide wafer industry, where they focus on creating advanced versions of high-performance electronic systems. EVs, together with industrial applications, benefit from new silicon carbide power modules that advanced in development. Continuous growth in research and development, together with a solid supply chain infrastructure, positions the marketplace under the region's strong leadership. 

North America is the fastest-growing region in the Silicon Carbide Market because investments continue to rise in electric vehicle defense and 5G infrastructure. Wolfspeed and ON Semiconductor take leadership roles in the United States technological development by expanding their silicon carbide wafer production activities. Silicon carbide MOSFETs are now reaching new heights in efficiency performance with their latest high-efficiency versions used for EVs and aerospace applications. The growth expands due to government support of both domestic semiconductor production and clean energy solutions. The region stands as a leading contributor to future market expansion because it quickly implements silicon carbide technology for renewable energy systems and high-frequency power electronics.

Competitive Landscape

Competitive forces in the Silicon Carbide (SiC) market have increased due to growing requirements for power electronics and electric vehicles (EVs) and semiconductors and industrial uses. Leading market participants enhance their competitive edges by making investments that involve technological breakthroughs, strategic connections, and capacity development. The STMicroelectronics N.V. network strengthens its Silicon Carbide supply operations through alliance partnerships and strategic acquisitions to complement its SiC MOSFET product range, which supports energy-efficient power technology solutions. ROHM Co. Ltd., together with ON Semiconductor Corporation, dedicates substantial funding to SiC wafer production development for automotive markets and industrial usage. Renesas Electronics Corporation, together with Microsemi Corporation, dedicate their efforts towards developing SiC-based power management solutions that serve aerospace and defense sector critical applications. 

The company Wolfspeed leads the industry for SiC wafer production with a strong focus on both electric vehicle applications and high-power solutions. The power electronics and renewable energy solutions development of Toshiba Corporation and General Electric Company (GE) depend on SiC technology. High-performance ceramics, along with raw materials for industrial and high-tech applications, are produced by Imerys and Tokai Carbon Co., Ltd., Schunk Ingenieurkeramik GmbH, and Morgan Advanced Materials plc in the materials sector of SiC production. Market players maintain a focus on developing new-generation SiC power devices, high-performance MOSFETs, and AI-driven process optimization systems. Firms throughout the market are reorganizing their operations to ensure reliable SiC wafer supply chains that match increasing worldwide demand.

Silicon Carbide Market, Company Shares Analysis, 2024

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Recent Developments:

  • In February 2025, SemiQ, a designer and developer of silicon carbide (SiC) solutions, announced a new family of three 1200V SiC full-bridge modules, each integrating two of the company's rugged high-speed switching SiC MOSFETs with reliable body diode. The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging, and other high-frequency DC applications.
  • In January 2025, SNAM Abrasives Pvt. Ltd., a leading manufacturer of silicon carbide grains (SiC) with over four decades of industry expertise, announced the launch of its latest innovation SNAM High Purity Silicon Carbide (HP SiC). With an impressive purity level of up to 4N (99.99%), this advanced material is designed to meet the stringent demands of cutting-edge applications.

Report Coverage:

By Product Type

  • Black Silicon Carbide
  • Green Silicon Carbide
  • Other Grades

 By Device Type

  • SiC Discrete Devices
  • SiC Modules
  • SiC Wafers

By Application

  • Power Electronics
  • Automotive
  • Aerospace & Defense
  • Energy & Power
  • Industrial
  • Telecommunication

By End-User

  • Automotive & Transportation
  • Electronics & Semiconductors
  • Energy & Power
  • Aerospace & Defense
  • Healthcare
  • Industrial Manufacturing

By Region

North America

  • U.S.
  • Canada

Europe

  • U.K.
  • France
  • Germany
  • Italy
  • Spain
  • Rest of Europe

Asia Pacific

  • China
  • Japan
  • India
  • Australia
  • South Korea
  • Singapore
  • Rest of Asia Pacific

Latin America

  • Brazil
  • Argentina
  • Mexico
  • Rest of Latin America

Middle East & Africa

  • GCC Countries
  • South Africa
  • Rest of the Middle East & Africa

List of Companies:

  • Saint-Gobain
  • Imerys
  • Tokai Carbon Co., Ltd.
  • Schunk Ingenieurkeramik GmbH
  • Morgan Advanced Materials plc
  • Infineon Technologies AG
  • Wolfspeed
  • Toshiba Corporation
  • General Electric Company
  • STMicroelectronics N.V.
  • Renesas Electronics Corporation
  • ON Semiconductor Corporation
  • ROHM Co., Ltd.
  • Microsemi Corporation
  • United Silicon Carbide, Inc.
  • Fuji Electric Co., Ltd.
  • Monolithic Power Systems, Inc.
  • Littelfuse, Inc.

Frequently Asked Questions (FAQs)

The Silicon Carbide market accounted for USD 4.38 Billion in 2024 and is expected to reach USD 15.85 Billion by 2035, growing at a CAGR of around 12.4% between 2025 and 2035.

Key growth opportunities in the Silicon Carbide market include Advancements in wafer production technology, reducing costs and improving silicon carbide adoption, increasing investments in aerospace and defense applications boosting silicon carbide usage, and Emerging markets creating new growth avenues for silicon carbide-based power devices.

The largest segment in the Silicon Carbide Market is power electronics, driven by its widespread use in electric vehicles, renewable energy, and industrial applications. The fastest-growing segment is electric vehicles, fueled by the rising demand for energy-efficient and high-performance semiconductor materials. The automotive sector is rapidly adopting silicon carbide-based components for improved efficiency and range. Additionally, the renewable energy sector is expanding due to the increasing use of silicon carbide in solar inverters and wind power systems.

Asia-Pacific will make a notable contribution to the global Silicon Carbide Market due to strong demand from the automotive, electronics, and renewable energy sectors. China leads in silicon carbide production and consumption, driven by its growing electric vehicle and power electronics industries.

The leading players in the global Silicon Carbide Market include Wolfspeed, Infineon Technologies, and STMicroelectronics, known for their advanced semiconductor solutions. Rohm Semiconductor and ON Semiconductor are also key players, expanding their silicon carbide product portfolios for automotive and industrial applications. II-VI Incorporated and General Electric contribute significantly with innovations in power electronics and wafer manufacturing. Other notable companies include Toshiba, Microchip Technology, and Fuji Electric, enhancing market competition through strategic investments and technological advancements.

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